a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l SCS202PD d u a l s e r i e s c h i p s s u r f a c e m o u n t s w i t c h i n g d i o d e d i m m i n m a x a 2 . 7 0 0 3 . 1 0 0 b 1 . 3 0 0 1 . 7 0 0 c 1 . 0 0 0 1 . 3 0 0 d 0 . 3 5 0 0 . 5 0 0 g 1 . 7 0 0 2 . 3 0 0 h 0 . 0 0 0 0 . 1 0 0 j 0 . 1 0 0 0 . 2 6 0 k 0 . 2 0 0 0 . 6 0 0 l 1 . 2 5 0 1 . 6 5 0 s 2 . 2 5 0 3 . 0 0 0 v 0 . 4 0 0 0 . 4 5 0 a l l d i m e n s i o n i n m m s c - 5 9 s g d b l a 1 3 2 t o p v i e w h c j k h c j k v anode 3 c a t hode 1 2 c a t hode marking code: mo 2 1 3 2 1 3 s c - 5 9 maximum ra tings (each diode) rating symbol v alue unit peak reverse voltage v rm (v) 80 vdc vdc dc reverse voltage v r (v) 80 peak forward current mean rectifying current i fm (ma) i o (ma) i surge (a) 300 100 madc surge current 4 mw mw power dissipation (total) p d (mw) 200 junction temperature t j (oc) 150 storage temperature t stg (oc) -55~+155 p / n type n electrical characteristics (ta=25 unless otherwise noted) (each diode) characteristic symbol min max unit forward voltage (i f = 100) v f (v) c t(pf) t rr(ns) ?e ?e ?e ?e 1.2 vdc (i r = 70ua) reverse current i r 0.1 m adc capacitance between terminals (v r = 6, f = 1.0 mhz) reverse recovery time (v r = 6, f = 5.0 mhz) 4 3 . 5 mvdc 1 . fr ? 5 = 1.0 x 0.75 x 0.06 2 in. 2.alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e oc oc ap p l i c a t i o n u l tra hi gh spe ed s w itc hing f e at ur es fo ur ty p e s of p a c k a g i ng ar e a v ail abl e. h i g h s pee d. ( t rr =1. 5ns t y p . ) s ui t ab le fo r high p ackin g dens it y lay o ut . h i gh r e l i a b i l i t y . construction silicon epitaxial planar 01 -jun-2002 rev. a page 1 of 3 rohs compliant product a suffix of "-c" specifies halogen & lead-free
a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l SCS202PD d u a l s e r i e s c h i p s s u r f a c e m o u n t s w i t c h i n g d i o d e h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e el ec tr ica l cha r act e r is ti c cu r v e s (t a= 2 5 c) 0 0 1 2 5 1 0 0 7 5 5 0 2 5 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 a m b i e n t t e m p e r a t u r e : t a ( o c ) p o w e r d i s s i p a t i o n : p d / p d m a x . ( % ) p o w e r a t t e n u a t i o n c u r v e 0 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.4 0.6 0.8 1.0 1.2 0 o c 30 o c t a=85 o c 50 o c 25 o c 1.4 1.6 f or war d c ur r e nt : i f ( ma) f or war d v olt ag e : v f ( v) f orward characteris tics r e v e r s e c ur r e nt : i r ( na) r e ve r s e voltag e : v r ( v) r evers e characteris tics 0.01 100 1000 10 0.1 1 10 20 30 40 80 70 60 50 0 t a 100 c 75 c 50 c 25 c 25 c 0 c 0 0 4 2 2 4 6 8 1 0 1 2 1 4 1 6 f = 1 m h z capacitance between terminals : c t ( pf) reverse voltage : v r ( v) 1 8 2 0 capacitance between terminals characteristics o 01-jun-2002 rev. a page 2 of 3
a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l SCS202PD d u a l s e r i e s c h i p s s u r f a c e m o u n t s w i t c h i n g d i o d e h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e 0 0 1 0 9 8 7 6 5 4 3 2 1 1 0 9 8 7 6 5 4 3 2 1 v r = 6 v r e v e r s e r e c o v e r y t i m e : t r r ( n s ) forward current : i f ( ma) reverse recovery time p uls e g e ne r at or out p ut 50 s amp ling os c illos c op e 50 0.01f 100ns inp ut d.u.t . i r 0.1i r t rr out p ut 0 5 r evers e recovery time (t rr ) meas urement circuit 01-jun-2002 rev. a page 3 of 3
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